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Effect of Processing Temperature on the Crystal Structure and Breakdown Strength of Biaxially Oriented Polypropylene Capacitor Films
- Polymer Bulletin Vol. 38, Issue 4, Pages: 622-631(2025)
- 作者机构：
1.泉州嘉德利电子材料股份公司，泉州 362122
2.四川大学高分子科学与工程学院，成都 610065
- 作者简介：
- 基金信息：
DOI：10.14028/j.cnki.1003-3726.2024.24.243
CLC：Received：26 August 2024，
Accepted：22 September 2024，
Published Online：08 November 2024，
Published：20 April 2025
- 稿件说明：
移动端阅览
王锦清, 郭汉乡, 杜建强, 张琴, 王柯. 加工温度对双向拉伸聚丙烯电容膜晶体结构和击穿强度的影响. 高分子通报, 2025, 38(4), 622–631.
Wang, J. Q.; Guo, H. X.; Du, J. Q.; Zhang, Q.; Wang, K. Effect of processing temperature on the crystal structure and breakdown strength of biaxially oriented polypropylene capacitor films. Polym. Bull. (in Chinese), 2025, 38(4), 622–631.
王锦清, 郭汉乡, 杜建强, 张琴, 王柯. 加工温度对双向拉伸聚丙烯电容膜晶体结构和击穿强度的影响. 高分子通报, 2025, 38(4), 622–631. DOI： 10.14028/j.cnki.1003-3726.2024.24.243.
Wang, J. Q.; Guo, H. X.; Du, J. Q.; Zhang, Q.; Wang, K. Effect of processing temperature on the crystal structure and breakdown strength of biaxially oriented polypropylene capacitor films. Polym. Bull. (in Chinese), 2025, 38(4), 622–631. DOI： 10.14028/j.cnki.1003-3726.2024.24.243.
摘要
基于同步双拉工艺，采用工业级高速率，分别研究了拉伸温度、热定型温度两大温度因素与双向拉伸聚丙烯(BOPP)电容膜晶体结构和击穿强度之间的关联性。研究发现，双向拉伸过程发生了应变诱导结晶，薄膜的片晶厚度、结晶度和长周期均高于铸片。拉伸温度的提高促进了重结晶，但接近初始熔融温度(
T
onset
)的拉伸因初始晶体的过度熔融而产生了不完善的薄片晶，导致结晶度降低。厚、薄片晶共同存在于高温拉伸薄膜中，二者的区别源于各自结晶前驱体的不同。对于热定型，温度的提高有利于链扩散，从而促进重结晶形成更完善的厚片晶。击穿强度(
E
b
)的威布尔分布结果表明，薄片晶的存在会劣化BOPP薄膜的
E
b
，接近
T
onset
拉伸所制备薄膜的击穿强度较其他薄膜降低了6%，
β
参数下降了50%，
E
b
稳定性遭到破坏。而退火由于促进了晶体结构完善，有利于
E
b
提高(120 ℃下退火样品
E
b
=655 V/μm，未退火样品
E
b
=606 V/μm)。这些结果对加工温度参数与薄膜晶体结构之间关系提供了新认识，有望为基于加工温度调控薄膜微观结构而实现电气性能优化提供理论参考。
Abstract
In this study
based on the synchronous biaxial stretching process and using high-speed rates
the correlation between stretching temperature
heat-setting temperature
and the crystal structure and breakdown strength of biaxially oriented polypropylene (BOPP) films for capacitor was investigated. It was found that strain-induced crystallization occurred during the biaxial stretching process. Lamellae thickness
crystallinity
and long period are all higher than those of cast sheets. An increase in stretching temperature promoted recrystallization
but stretching close to the onset melting temperature (
T
onset
) resulted in imperfect thin lamellae due to excessive melting
leading to a decrease in crystallinity. Thick and thin lamellae coexisted in high-temperature stretched films
with the differences originating from their respective recrrystallization precursors. For heat-setting (annealing)
an incre
ase in temperature facilitated chain diffusion
thereby enhancing the recrystallization of more perfect thick lamellae. Weibull distribution analysis of breakdown strength (
E
b
) indicated that the presence of thin lamellae degraded the
E
b
with films prepared close to
T
onset
exhibiting a 6% and 50% reduction in
E
b
and paremeter
β
respectively
compared to those of other films. Annealing
by promoting the perfection of crystal structure
was found to enhance
E
b
(
E
b
=655 V/μm for annealed at 120 ℃
compared to
E
b
=606 V/μm for non-annealed samples). These results provide insights into the systematic understanding of the relationship between processing temperature and film crystal structure
laying the groundwork for optimizing the electrical properties of films by controlling the microstructure through processing temperature adjustment.
关键词
Keywords
references
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