AZ<sup>®</sup> 15nXT Photoresist for Lift-off Applications

CHEN Chun-wei; TOUKHY Medhat; BOGUSZ Zachary; MEYER Stephen; LIU Wei-hong; LU Ping-hung

doi:10.14028/j.cnki.1003-3726.2014.12.020

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AZ^® 15nXT Photoresist for Lift-off Applications

研究简报 | 更新时间：2022-09-18

- AZ^® 15nXT Photoresist for Lift-off Applications
- 暂无标题
- 高分子通报 2014年27卷第12期页码：170-178
- 作者机构：
  
  AZ Electronic Materials USA Corp. (A Subsidiary of Merck KGaA, Darmstadt , Germany), 70 Meister Avenue , Somerville,NJ 08876, USA
- 作者简介：
  
  *E-mail: Chunwei.Chen@emdgroup.com.
- 基金信息：
- DOI：10.14028/j.cnki.1003-3726.2014.12.020
  中图分类号：
- 纸质出版日期：2014-12，
  
  收稿日期：2014-11-09，
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CHEN Chun-wei, TOUKHY Medhat, BOGUSZ Zachary, MEYER Stephen, LIU Wei-hong, LU Ping-hung. AZ^® 15nXT Photoresist for Lift-off Applications[J]. 高分子通报, 2014,27(12):170-178.
CHEN Chun-wei, TOUKHY Medhat, BOGUSZ Zachary, MEYER Stephen, LIU Wei-hong, LU Ping-hung. AZ^® 15nXT Photoresist for Lift-off Applications[J]. 高分子通报, 2014,27(12):170-178. DOI： 10.14028/j.cnki.1003-3726.2014.12.020.

DOI：

摘要

15nXT is a chemically-amplified negative-tone thick film photoresist. The resist has vertical profile and is widely used for redistribution layer (RDL) and through silicon vias (TSV) applications. For lift-off applications

however

the inverted profile is needed. In this paper

we report the effects of process conditions on the resist profile and process window for lift off applications.

Abstract

关键词

Chemically amplifiedThick filmLift-offNegative photoresistInverted profile

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AZ® 15nXT Photoresist for Lift-off Applications

暂无标题

DOI：10.14028/j.cnki.1003-3726.2014.12.020

摘要

Abstract

关键词

Keywords

references

AZ^® 15nXT Photoresist for Lift-off Applications